Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 28A 3Pin(2+Tab) D2PAK45895+$33.726450+$32.2851200+$31.4780500+$31.27621000+$31.07442500+$30.84385000+$30.69977500+$30.5556 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 28A 3Pin(2+Tab) D2PAK T/R52415+$13.352050+$12.7814200+$12.4619500+$12.38201000+$12.30212500+$12.21085000+$12.15387500+$12.0967 -
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Category: IGBTtransistorDescription: IGBT Over 21A, Infineon's optimized IGBT design is used for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.59285+$17.269250+$16.5312200+$16.1179500+$16.01461000+$15.91132500+$15.79325000+$15.71947500+$15.6456 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 31A 3Pin(2+Tab) D2PAK449410+$10.7640100+$10.2258500+$9.86701000+$9.84912000+$9.77735000+$9.68767500+$9.615810000+$9.5800 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(2+Tab) D2PAK Tube58135+$11.773750+$11.2706200+$10.9888500+$10.91841000+$10.84792500+$10.76745000+$10.71717500+$10.6668 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 16A 60000mW 3Pin(2+Tab) D2PAK Tube9210 -
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Category: IGBTtransistorDescription: Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9A3297 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 14A 3Pin(2+Tab) D2PAK T/R540010+$11.6652100+$11.0819500+$10.69311000+$10.67372000+$10.59595000+$10.49877500+$10.420910000+$10.3820 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 3Pin(2+Tab) TO-263905810+$11.3232100+$10.7570500+$10.37961000+$10.36072000+$10.28525000+$10.19097500+$10.115410000+$10.0776 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 48A 300000mW 3Pin(2+Tab) TO-263AA84821+$45.248610+$42.6524100+$40.7237250+$40.4270500+$40.13031000+$39.79652500+$39.49985000+$39.3143 -
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Category: IGBTtransistorDescription: 600V ，600V Switching Power Supply Series N-channel IGBT, SMPS Series N-channel IGBT9549 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1000V 8A 40000mW 3Pin(2+Tab) TO-263AA48071+$44.135910+$41.6036100+$39.7223250+$39.4329500+$39.14351000+$38.81792500+$38.52855000+$38.3476 -
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Category: IGBTtransistorDescription: IGBT，Fairchild Semiconductor These * * EcoSPARK2 * * IGBT devices have been optimized and can be used to drive car ignition coils. They have undergone stress testing and comply with the AEC-Q101 standard. Logic level gate driven ESD protection applications: automotive ignition coil driver circuits, coil spark plug applications. **RS Product Code * * 807-0776 FGD3440G2_F085 400V 25A DPAK 864-8818 FGB3440G2_F085 400V 25A D2PAK-2 864-8893 FGP3440G2_F085 400V 25A TO220 864-8880 FGI3040G2_F085 400V 25A I2PAK 864-8899 FGP3040G2_F085 400V 25A TO220 864-8827 FGD3245G2_F085 450V 23A DPAK 864-8809 FGB3245G2_F085 450V 23A D2PAK-2 ### The current rating mentioned is applicable when the contact temperature Tc is+110 ° C. ###Standard AEC-Q101 # # IGBT discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.908310+$11.2704100+$10.7069500+$10.33121000+$10.31242000+$10.23735000+$10.14347500+$10.068210000+$10.0307 -
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Category: IGBTtransistorDescription: 600V ，Switching Power Supply II Series N-channel IGBT and Anti Parallel Diode StealthTM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode45945+$18.343350+$17.5594200+$17.1204500+$17.01061000+$16.90092500+$16.77555000+$16.69717500+$16.6187 -
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Category: IGBTtransistorDescription: 600V ，Switching Power Supply II Series N-channel IGBT 600V, SMPS II Series N-channel IGBT71015+$26.363650+$25.2370200+$24.6060500+$24.44831000+$24.29062500+$24.11035000+$23.99767500+$23.8850 -
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Category: IGBTtransistorDescription: IGBT，Fairchild Semiconductor ### IGBT Discrete components and modules, Fairchild Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.191510+$9.0132100+$8.5625500+$8.26211000+$8.24712000+$8.18705000+$8.11197500+$8.051810000+$8.0217 -
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Category: IGBTtransistorDescription: IGBT Up to 20A, Infineon optimized IGBT design is used for mid frequency applications, providing fast response and maximum efficiency for users. These devices utilize FRED optimized diodes to provide optimal IGBT performance. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.67045+$13.053750+$12.4958200+$12.1834500+$12.10531000+$12.02722500+$11.93805000+$11.88227500+$11.8264 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 28A 100000mW 3Pin(2+Tab) D2PAK T/R899610+$9.5472100+$9.0698500+$8.75161000+$8.73572000+$8.67205000+$8.59257500+$8.528810000+$8.4970 -
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Category: IGBTtransistorDescription: IGBT Over 21A, Infineon's optimized IGBT design is used for mid frequency applications, with fast response and maximum efficiency for users. By utilizing optimized FRED diodes, optimal performance can be achieved with IGBT # # IGBT transistors. International Rectifiers offer a comprehensive portfolio of IGBT (Insulated Gate Bipolar Transistor) products ranging from 300V to 1200V, utilizing various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and enhancing power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.570210+$10.4748100+$9.9511500+$9.60191000+$9.58442000+$9.51465000+$9.42737500+$9.357510000+$9.3226 -
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Category: IGBTtransistorDescription: INFINEON AUIRGS30B60K Single transistor, IGBT, 78 A, 600 V, 370 W, 600 V, TO-262, 3 pins220510+$8.7504100+$8.3129500+$8.02121000+$8.00662000+$7.94835000+$7.87547500+$7.817010000+$7.7879 -
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Category: IGBTtransistorDescription: 600V ，Switching Power Supply II Series N-channel IGBT 600V, SMPS II Series N-channel IGBT24011+$39.190110+$36.9415100+$35.2711250+$35.0141500+$34.75711000+$34.46802500+$34.21105000+$34.0504 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 14A 49000mW 3Pin(2+Tab) D2PAK T/R34775+$15.059150+$14.4155200+$14.0551500+$13.96501000+$13.87492500+$13.77205000+$13.70767500+$13.6433 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 18A 60000mW 3Pin(2+Tab) D2PAK78301+$120.877710+$117.724350+$115.3068100+$114.4659200+$113.8352500+$112.99431000+$112.46882000+$111.9432 -
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Category: IGBTtransistorDescription: Co-Pack IGBT Up to 20A, Infineon's isolated gate bipolar transistor (IGBT) provides users with a complete range of options to ensure coverage of your application. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.50395+$2.972725+$2.752550+$2.5984100+$2.5323500+$2.48832500+$2.43325000+$2.411210000+$2.3782
